DatasheetsPDF.com

AO3400 Dataheets PDF



Part Number AO3400
Manufacturers HOTTECH
Logo HOTTECH
Description N-Channel MOSFET
Datasheet AO3400 DatasheetAO3400 Datasheet (PDF)

Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D G S AO3400 N-Channel MOSFET 1.Gate 2.Source 3.

  AO3400   AO3400



Document
Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D G S AO3400 N-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum 30 20 5.8 4.9 30 1.4 1.0 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Lead t ≤ 10s Steady-S.


KO3400 AO3400 AO3400


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)