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Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching.
D
G S
AO3400
N-Channel MOSFET
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID IDM PD
TJ, TSTG
Maximum
30 20
5.8 4.9 30 1.4 1.0 -55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D
Maximum Junction-to-Lead
t ≤ 10s Steady-S.