AO3409

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -2.6 -2.2 -20 1.4 1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ Max 70 90 100 125 63 80 Unit V V A W °C Unit °C/W °C/W °C/W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4-P1 Plastic-Encapsulate Mosfets AO3409 Electrical Characteristics (TA=25°C, unless...