2N7002K

N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE * Description: * Gate Pretection Diode SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications. Features: *Simple Drive Requirement *Small Package Outline 2N7002K DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 2 3 SOT-23 Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3,V GS @10V(TA ,V GS @10V(TA Pulsed Drain Current1, 2 Tota l Po wer Dis s ipation(TA=25˚C ) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range VDS VGS ID I DM PD R θJA TJ Tstg Gate−Source ESD Rating (HBM, Method 3015) ESD Value 60 ±20 640 500 950 1.38 90 +150 -55~+150 2500 Unit V mA W ˚C/W ˚C ˚C V Device Marking 2N7002K = RK ...