2N7002K

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ƽ ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current -Continuous ( Note:1) -Pulsed Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage (Note.2) Zero Gate Voltage Drain Current (Note.2) Gate-Body Leakage Current (Note.2) Gate Threshold Voltage (Note.2) Static Drain-Source On-Resistance (Note.2) Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-On DelayTime Turn-Off DelayTime (Note.2) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 D rain Gate Gate Protection Diode Source Symbol VDS VGS ID PD RthJA TJ Tstg Rating 60 ±20 300 800 350 357 150 -55 to 150 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 Unit V mA mW ć/W ć 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.1BaGsAeTE 2.2EmSiOtUtReCrE 3 DRAIN Symbol VDSS IDSS IGSS VGS(th) RDS(On) | Yfs | Ciss Coss Crss Qg td(on) td(off) Test Conditions ID=100­A, VGS=0V VDS=60V, VGS=0V VDS=0V, VGS=±20V VDS = 10V, ID = 1mA VGS=10V, ID=500mA VGS=10V, ID=50mA VGS=10V, ID=200mA V...