N-Channel MOSFET. AO3420 Datasheet

AO3420 MOSFET. Datasheet pdf. Equivalent


Part AO3420
Description 20V N-Channel MOSFET
Feature AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench t.
Manufacture Oucan Semi
Datasheet
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AO3420
AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
20V
6A
< 24m
< 27m
< 42m
< 55m
SOT23
Top View
Bottom View
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
6
5
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.2. 0: August 2013
Page 1 of 5



AO3420
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, ID=6A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=10V, ID=6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.7,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Min
20
0.4
420
65
45
0.8
Typ Max Units
V
1
µA
5
±100 nA
0.75 1.1
V
16 24
m
23 35
18 27 m
23 42 m
31 55 m
25 S
0.7 1
V
2A
525 630
95 125
75 105
1.7 2.6
pF
pF
pF
12.5 nC
6 nC
1 nC
2 nC
3 ns
7.5 ns
20 ns
6 ns
14 ns
6 nC
Rev.2. 0: August 2013
Page 2 of 5







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