2SK3018

Production specification N-Channel Enhancement Mode Field Effect Transistor 2SK3018 FEATURES z Low on-resistance. z Fast switching speed. z Low voltage drive(2.5V)makes this Device ideal for portable equipment. z Easily designed drive circuits. z Easy to parallel. Pb Lead-free APPLICATIONS z Interfacing,switching (30V,100mA) ORDERING INFORMATION Type No. Marking 2SK3018 KN SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDP*1 IDR IDRP*1 PD*2 Gate -Source voltage ±20 drain current Reverse drain current Continuous 100 Pulsed 200 Continuous 100 Pulsed 200 Total Power Dissipation(TC=25℃) 200 Tch, Tstg Channel and Storage Temperature -55 to +150 *1Pw≤10us,Duty cycle≤50% *2With each pin mounted on the recommended lands. Units V V mA mA mW ℃ C174 Rev.A www.gmicroelec.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor 2SK3018 ...