IRLML6401

Plastic-Encapsulate Mosfets IRLML6401 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated l Lead-Free l Halogen-Free l Marking: 1F * 6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor EAS VGS TJ, TSTG Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambientƒ Power MOSFET VDSS = -12V ' RDS(on) = 0.05Ω Max. -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.0 -55 to + 150 Typ. 75 Max. 100 Units V A W W/°C mJ V °C Units °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ...