P-Channel Enhancement MOSFET
SMD Type P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
■ Features
● Ultra low on-resistance. ● P-Channel M...
Description
SMD Type P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
■ Features
● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching.
+0.12.4 - 0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
0-0.1 +0.10.38
- 0.1
+0.10.97 -0.1
+1.3 0.1 - 0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=4.5V @ TA=25℃
Continuous Drain Current VGS=4.5V@ TA=70℃
Pulsed Drain Current a
Power Dissipation
@ TA=25℃
Power Dissipation
@ TA=70℃
Single Pulse Avalanche Energy b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD
EAS RthJA
TJ Tstg
Rating -12 ±8 -4.3 -3.4 -34 1.3 0.8 33 100 0.01 150
-55 to 150
Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b...
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