DatasheetsPDF.com

2N6518 Dataheets PDF



Part Number 2N6518
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS
Datasheet 2N6518 Datasheet2N6518 Datasheet (PDF)

2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Curren.

  2N6518   2N6518


Document
2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO VEBO IC IB PD TJ, Tstg 2N6515 2N6518 250 250 2N6516 2N6519 300 300 6.0 5.0 500 250 625 -65 to +150 2N6517 2N6520 350 350 UNITS V V V V mA mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=150V ICBO VCB=200V ICBO VCB=250V IEBO VEB=5.0V (NPN) IEBO VEB=4.0V (PNP) BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=10μA (NPN) BVEBO IE=10μA (PNP) .


2N6517 2N6518 2N6519


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)