High Voltage Transistors
MAXIMUM RATINGS
Rating
2N6517 Symbol 2N6515 2N6519 2N6520
Unit
Collector–Emitter Voltage
C...
High Voltage
Transistors
MAXIMUM RATINGS
Rating
2N6517 Symbol 2N6515 2N6519 2N6520
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520
VCEO 250 300 350 Vdc
VCBO 250 300 350 Vdc
VEBO
Vdc
6.0
5.0
Base Current
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
IB IC PD
250 mAdc
500 mAdc
625 mW 5.0 mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD
1.5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
COLLECTOR 3
RqJA RqJC
200 °C/W
83.3 °C/W COLLECTOR 3
NPN 2N6515 2N6517
PNP 2N6519 2N6520
Voltage and current are negative for
PNP transistors
1 23
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
2 BASE
2 BASE
NPN
PNP
1 EMITTER
1 EMITTER
ELECTRICAL CHARACTERISTICS (TA =...