2SA812

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA812 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector .020(0.50) .012(0.30) SOT-23 3 .063(1.60) .108(0.65) .055(1.40) .089(0.25) 12 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -50 -5 -100 150 +150 -55 to +150 Unit V V V mA mW oC oC .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09) .026(0.65) .010(0.25) .004 (0.10) Max .027(0.67) .013(0.32) Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCB...