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2SA812RLT1

WILLAS

General Purpose Transistors

WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M...


WILLAS

2SA812RLT1

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Description
WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FEALToUwRpErofile surface mounted application in order to optimize board space. ƽHLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency. ƽEHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage drop. SOD-123H 0.146(3.7) 0.130(3.3) ƽNHPiNghcosmurpgleemceanpta: 2bSiliCty1.623 ƽWGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. compliance with RoHS requirements. PUbl-tFrareheigpha-cskpaegede siswaitvcahiilnagb.le RSoiHlicSopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”liGco” n junction. HLaeloagde-fnrefreepeaprrtsodmuecet tfoernpvaircokninmgecnotadlesstaunffdixa“rHds” of MRMooiIHsLt-SuSrpTerDoSd-e1unc9st5ift0oiv0r ...




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