2SC3330

2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 200 300 150 -55 to +150 Unit V V V mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y G L hFE hFE hFE hFE hFE Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage V(BR)CBO at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current V(BR...