Silicon Epitaxial Planar Transistor
FEATURES
z High hFE z Complementary pair with 2SA1981
Pb
Lead-free
Production spe...
Silicon Epitaxial Planar
Transistor
FEATURES
z High hFE z Complementary pair with 2SA1981
Pb
Lead-free
Production specification
2SC5344
APPLICATIONS
z General small signal amplifier
ORDERING INFORMATION
Type No.
Marking
2SC5344
FAO/FAY
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
800
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C023 Rev.A
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Production specification
Silicon Epitaxial Planar
Transistor
2SC5344
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
IC=100μA,IE=0 IC=1mA,IB=0
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=...