2SC536M(3DG536M) 2SC536KM(3DG536KM)
NPN /SILICON NPN TRANSISTOR
:。
Purpose: Small signal general purpose amplifier ap...
2SC536M(3DG536M) 2SC536KM(3DG536KM)
NPN /SILICON
NPN TRANSISTOR
:。
Purpose: Small signal general purpose amplifier applications.
/Absolute Maximum Ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO VCEO VEBO
3DG536M 3DG536KM
3DG536M 3DG536KM
40 55
V
30 50
V
5.0 V
IC 100 mA
ICP 300 mA
PC 250 mW
Tj 150 ℃
Tstg
-55～150
℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Condition
Min
Rating
Typ
Max
Unit
ICBO VCB=35V
IE=0
1.0 μA
IEBO VEB=4.0V
IC=0
1.0 μA
hFE VCE=6.0V
IC=1.0mA
60
960
VCE(sat)
IC=50mA
IB=5.0mA
0.5 V
fT VCE=6.0V IC=1.0mA
100 MHz
Cob VCB=6.0V IE=0 f=1.0MHz
3.5 pF
CC.rbb′
VCB=6.0V Ic=1.0mA f=31.9MHz
hFE 、/hFE classifications、Marking：
hFE
hFE Classifications
D
E
hFE
hFE Range
60～120 100～200
Markin...
