2SD1782

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1782 TRANSISTOR (NPN) FEATURES z Low VCE(sat) z High BVCEO z Complements the 2SB1198 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 80 80 5 500 200 150 -55-150 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=50μA, IE=0 V(BR)CEO IC=2mA, IB=0 V(BR)EBO IE=50μA, IC=0 ICBO VCB=50V, IE=0 IE...