2SD601A

Production specification Silicon Epitaxial Planar Transistor FEATURES Pb z Mini type package. Lead-free z Complementary to 2SB709A PNP Transistor. z Low collector to emitter saturation voltage VCE(sat). z High forward current transfer ratio hFE. 2SD601A APPLICATIONS z General purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking 2SD601A ZQ/ZR/ZS Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 7 IC Collector Current 100 PC Collector power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C116 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor 2SD601A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO...