Document
SMD Type
www.DataSheet4U.com
Transistors
PNP Silicon AF Transistors KC808(BC808)
Features
High collector current. High current gain. Low collector-emitter saturation voltage.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PD Tj Tstg
Rating -30 -25 -5 -800 310 150
-65 to +150
Unit V V V mA
mW
0-0.1 +0.10.38
-0.1
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter Collector-to-baser breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current
DC current gain *
Collector saturation voltage * Base emitter on voltage Output Capacitance Transition frequency * Pulsed: PW 3.