KC808A-16

SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808A(BC808A) Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Rating -30 -25 -5 -500 -1 -100 310 -65 to +150 150 Unit V V V mA A mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * KC808A-16 KC...