KC817-25W

SMD Type NPN Silicon AF Transistors KC817W www.DataSheet4U.com Transistors Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICM IB PD Tj Tstg Rating 50 45 5 500 1 100 250 150 -65 to +150 Unit V V V mA A mA mW 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base to emitter voltage * Collector-base capacitance Emitter-base capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle KC817-16W KC817-25W KC817-40W 2% Sym...