General Purpose Transistors
BC817-16-G/25-G/40-G (NPN)
RoHS Device
Features
- For general AF applications. - High colle...
General Purpose
Transistors
BC817-16-G/25-G/40-G (
NPN)
RoHS Device
Features
- For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Marking:
BC817-16-G: 6A BC817-25-G: 6B BC817-40-G: 6C
Diagram:
Collector 3
1 Base
2 Emitter
SOT-23
0.056(1.40) 0.047(1.20)
0.119(3.00) 0.110(2.80)
3
12
0.079(2.00) 0.071(1.80)
0.045(1.15) 0.035(0.90)
0.006(0.15) 0.003(0.08)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max
0.020(0.50) 0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage
VCBO VCEO VEBO
Collector current-continuous Collector power dissipation Junction and storage temperature range
IC PC TJ, TSTG
Value
50 45 5 500 300 -55 to +150
Unit
V V V mA mW °C
Company reserves the right to improve product design , functions and reliability without notice.
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