Purpose Transistors. SBC857BDW1T1G Datasheet

SBC857BDW1T1G Transistors. Datasheet pdf. Equivalent

SBC857BDW1T1G Datasheet
Recommendation SBC857BDW1T1G Datasheet
Part SBC857BDW1T1G
Description Dual General Purpose Transistors
Feature SBC857BDW1T1G; BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual Ge.
Manufacture ON Semiconductor
Datasheet
Download SBC857BDW1T1G Datasheet




ON Semiconductor SBC857BDW1T1G
BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
VCEO
−65
−45
−30
V
Collector −Base Voltage
BC856, SBC856
BC857, SBC857
BC858
VCBO
−80
−50
−30
V
Emitter −Base Voltage
Collector Current −Continuous
Collector Current − Peak
VEBO
IC
IC
−5.0
−100
−200
V
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
380 mW
250 mW
3.0 mW/°C
°C/W
328
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
3x MG
G
1
3x = Specific Device Code
x = B, F, G, or L
(See Ordering Information)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
August, 2016 − Rev. 10
1
Publication Order Number:
BC856BDW1T1/D



ON Semiconductor SBC857BDW1T1G
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V(BR)EBO
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
(IC = −2.0 mA, VCE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
fT
Cob
NF
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
220
420
−0.6
100
Typ Max
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
− −15
− −4.0
150 −
270 −
290 475
520 800
− −0.3
− −0.65
−0.7 −
−0.9 −
− −0.75
− −0.82
−−
− 4.5
− 10
Unit
V
V
V
V
nA
mA
V
V
V
MHz
pF
dB
www.onsemi.com
2



ON Semiconductor SBC857BDW1T1G
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856/SBC856
VCE = -5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.6
IC =
-1.2 -10 mA
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0 -10 -20
Figure 3. Collector Saturation Region
-1.0
-1.4
-1.8
qVB for VBE
-2.2
-55°C to 125°C
-2.6
-3.0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
40
TJ = 25°C
20 Cib
10
8.0
6.0 Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
500 VCE = -5.0 V
200
100
50
20
-1.0 -10 -100
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
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