BC858A

BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858, BC859 -VCEO Emitter Base Voltage -VEBO Collector Current -IC Peak Collector Current -ICM Power Dissipation Ptot Junction Temperature TJ Storage Temperature Range Tstg Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA BC856 BC857 BC858, BC859 Collector Emitter Breakdown Voltage at -IC = 10 µA BC856 BC857 BC858, BC859 Collector Emitter Breakdown Voltage at -IC = 10 mA BC856 BC857 BC858, BC859 Emitter Base Breakdown Voltage at -IE = 1 µA Collector Emitter Saturation Voltage at -IC = 10 mA, - IB = 0.5 mA at -IC = ...