Document
Advanced Power Electronics Corp.
AP80N03S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement
Description
G D S TO-263
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP80N03P) is available for low-profile applications.
BVDSS RDS(ON) ID
30V 8mΩ 80A
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃
IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Rating 30
±.