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AP80N03S Dataheets PDF



Part Number AP80N03S
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP80N03S DatasheetAP80N03S Datasheet (PDF)

Advanced Power Electronics Corp. AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement Description G D S TO-263 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC .

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Advanced Power Electronics Corp. AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement Description G D S TO-263 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP80N03P) is available for low-profile applications. BVDSS RDS(ON) ID 30V 8mΩ 80A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 ±.


BCX71K AP80N03S 7803SR-C


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