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FMMT591

GME

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES z High saturation voltage. z Complementary To FMMT491. z Excellent HFE...


GME

FMMT591

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Description
PNP Silicon Epitaxial Planar Transistor FEATURES z High saturation voltage. z Complementary To FMMT491. z Excellent HFE Linearity. Pb Lead-free APPLICATIONS z Switching appilication. Production specification FMMT591 ORDERING INFORMATION Type No. Marking FMMT591 591 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -1000 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C053 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor FMMT591 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 ...




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