FMMT591

FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol V(BR)CEO V(BR)CBO COLLECTOR 3 1 BASE 2 EMITTER Value -60 -80 3 1 2 SOT-23 Unit V V Emitter-Base Breakdown Voltage V(BR)EBO -5.0 V Collector Current Power Dissipation TA=25°C Junction Temperature Range IC -1.0 A PD 500 mW TJ +150 °C Storage Temperature Range TSTG -55 to +150 °C Device Marking FMMT591=591 Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collent-Emitter Breakdown Voltage1 IC = -1.0mA, IB = 0 Collent-Base Breakdown Voltage IC = -100µA, IE = 0 Collent Cutoff Current IC = 0, IE = -100µA Collector Cut-off Current VCB = -60V, IE = 0 Emitter Cut-off Current VEB = -4.0V, IC = 0 V(BR)CEO -60 - - V V(BR)CBO -80 - - V V(BR)EBO -5.0 - - V ICBO IEBO - - -0.1 µA - -0.1 µA WEITRON http://www.weitron...