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PNP Silicon. FMMT591 Datasheet

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PNP Silicon. FMMT591 Datasheet






FMMT591 Silicon. Datasheet pdf. Equivalent




FMMT591 Silicon. Datasheet pdf. Equivalent





Part

FMMT591

Description

General Purpose Transistor PNP Silicon



Feature


FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Rati ngs Rating Collector-Base Breakdown Vol tage Collector-Emitter Breakdown Voltag e Symbol V(BR)CEO V(BR)CBO COLLECTOR 3 1 BASE 2 EMITTER Value -60 -80 3 1 2 SOT-23 Unit V V Emitter-Base Breakdow n Voltage V(BR)EBO -5.0 V Collector Current Power Dissipation TA=25°C Jun ction Temperature R.
Manufacture

WEITRON

Datasheet
Download FMMT591 Datasheet


WEITRON FMMT591

FMMT591; ange IC -1.0 A PD 500 mW TJ +150 ° C Storage Temperature Range TSTG -55 to +150 °C Device Marking FMMT591=5 91 Electrical Characteristics (TA=25º C Unless Otherwise noted) Characterist ics Symbol Min Typ Max Unit Off Ch aracteristics Collent-Emitter Breakdow n Voltage1 IC = -1.0mA, IB = 0 Collent- Base Breakdown Voltage IC = -100µA, IE = 0 Collent Cutoff Cur.


WEITRON FMMT591

rent IC = 0, IE = -100µA Collector Cut- off Current VCB = -60V, IE = 0 Emitter Cut-off Current VEB = -4.0V, IC = 0 V(BR)CEO -60 - - V V(BR)CBO -80 - - V V(BR)EBO -5.0 - - V ICBO IEBO - - -0.1 µA - -0.1 µA WEITRON http://www.weitron .


WEITRON FMMT591

.

Part

FMMT591

Description

General Purpose Transistor PNP Silicon



Feature


FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Rati ngs Rating Collector-Base Breakdown Vol tage Collector-Emitter Breakdown Voltag e Symbol V(BR)CEO V(BR)CBO COLLECTOR 3 1 BASE 2 EMITTER Value -60 -80 3 1 2 SOT-23 Unit V V Emitter-Base Breakdow n Voltage V(BR)EBO -5.0 V Collector Current Power Dissipation TA=25°C Jun ction Temperature R.
Manufacture

WEITRON

Datasheet
Download FMMT591 Datasheet




 FMMT591
FMMT591
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
V(BR)CEO
V(BR)CBO
COLLECTOR
3
1
BASE
2
EMITTER
Value
-60
-80
3
1
2
SOT-23
Unit
V
V
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
Collector Current
Power Dissipation
TA=25°C
Junction Temperature Range
IC -1.0 A
PD 500 mW
TJ
+150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Device Marking
FMMT591=591
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
Off Characteristics
Collent-Emitter Breakdown Voltage1
IC = -1.0mA, IB = 0
Collent-Base Breakdown Voltage
IC = -100µA, IE = 0
Collent Cutoff Current
IC = 0, IE = -100µA
Collector Cut-off Current
VCB = -60V, IE = 0
Emitter Cut-off Current
VEB = -4.0V, IC = 0
V(BR)CEO
-60
-
-
V
V(BR)CBO
-80
-
-
V
V(BR)EBO
-5.0
-
-
V
ICBO -
IEBO -
- -0.1 µA
- -0.1 µA
WEITRON
http://www.weitron.com.tw
1/4
23-Jan-06




 FMMT591
FMMT591
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
On Characteristics (1)
DC Current Gain
VCE= -5.0V, IC= -1.0mA
VCE= -5.0V, IC= -500mA
VCE= -5.0V, IC= -1.0A
VCE= -5.0V, IC= -2.0A
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
IC = -1.0A, IB = -100mA
Base-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
Base-Emitter Saturation Voltage
VCE = -5.0A, IC = -1.0A
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
VBE
100
100
80
15
-
-
-
-
-
-
-
-
-
-
Max
Unit
-
300
-
-
-
-0.3 V
-0.6
-1.2 V
-1.0 V
Small-signal Characteristics
Transition Frequency
VCE = -10V, IC = -50mA, f = 100MHz
fT 150 -
Output Capacitance
VCB = -10V, f = 1.0MHz
Cob -
-
1. Measured under pulsed conditions, Pulse width = 300µs, Duty cycle ≤ 2%.
- MHz
10 pF
WEITRON
http://www.weitron.com.tw
2/4
23-Jan-06




 FMMT591
FMMT591
TYPICAL TRANSIENT CHARACTERISTICS
0.6 +25°C
0.5
0.4
0.3 IC/IB=10
0.2 IC/IB=50
0.1
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.1 VCE(sat) vs IC
400
+100°C
300
+25°C
200
-55°C
100
VCE=5V
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.3 hFE vs IC
0.6
IC/IB=10
0.5
0.4
0.3 -55°C
+25°C
0.2 +100°C
0.1
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.2 VCE(sat) vs IC
IC/IB=10
1.0
0.8
0.6
-55°C
0.4 +25°C
+100°C
0.2
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.4 VBE(sat) vs IC
1.2
VCE=5V
1.0
0.8
0.6
-55°C
0.4 +25°C
+100°C
0.2
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.5 VBE(on) vs IC
10
1
DC
1s
0.1 100ms
10ms
1ms
100µs
0.01
0.1
1
10
VCE-Collector Emitter Voltage (V)
Fig.6 Safe Operating Area
100
WEITRON
http://www.weitron.com.tw
3/4
23-Jan-06



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