BAW56T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : ESM. Low Forward Voltage : VF=0.92V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Continuous Forward Current IF 150 Surge Current (10ms) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW C A G H BAW56T SILICON EPITAXIAL TYPE DIODE E B 2 13 DIM MILLIMETERS D A 1.60+_ 0.10 B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. CATHODE 1 2. CATHODE 2 3. ANODE 3 21 ESM Marking H1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse R...