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Gate Thyristor. R1279NC24J Datasheet

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Gate Thyristor. R1279NC24J Datasheet






R1279NC24J Thyristor. Datasheet pdf. Equivalent




R1279NC24J Thyristor. Datasheet pdf. Equivalent





Part

R1279NC24J

Description

Distributed Gate Thyristor



Feature


Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R12 79NC22x to R1279NC25x Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state volta ge, (note 1) Non-repetitive peak off-st ate voltage, (note 1) Repetitive peak r everse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) IT(AVM ) IT(AVM) IT(AVM) .
Manufacture

IXYS

Datasheet
Download R1279NC24J Datasheet


IXYS R1279NC24J

R1279NC24J; IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t (di/ dt)cr VRGM PG(AV) PGM Tj op Tstg OTHER RATINGS Maximum average on-state curre nt, Tsink=55°C, (note 2) Maximum avera ge on-state current. Tsink=85°C, (note 2) Maximum average on-state current. T sink=85°C, (note 3) Nominal RMS on-sta te current, Tsink=25°C, (note 2) D.C. on-state current, Tsink=25°C, (note 4) Peak non-repetitive su.


IXYS R1279NC24J

rge tp=10ms, Vrm=0.6VRRM, (note 5) Peak non-repetitive surge tp=10ms, Vrm≤10V , (note 5) I2t capacity for fusing tp=1 0ms, Vrm=0.6VRRM, (note 5) I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5 ) Critical rate of rise of on-state cur rent (repetitive), ( .


IXYS R1279NC24J

.

Part

R1279NC24J

Description

Distributed Gate Thyristor



Feature


Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R12 79NC22x to R1279NC25x Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state volta ge, (note 1) Non-repetitive peak off-st ate voltage, (note 1) Repetitive peak r everse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) IT(AVM ) IT(AVM) IT(AVM) .
Manufacture

IXYS

Datasheet
Download R1279NC24J Datasheet




 R1279NC24J
Date:- 01 August 2012
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R1279NC22x to R1279NC25x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
2200-2500
2200-2500
2200-2500
2300-2600
UNITS
V
V
V
V
MAXIMUM
LIMITS
1279
851
493
2571
2123
14.8
16.3
1.10×106
1.33×106
1000
1500
5
5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type R1279NC22x to R1279NC25x Issue 2
Page 1 of 12
August 2012




 R1279NC24J
Characteristics
Distributed Gate Thyristor Types R1279NC22x to R1279NC25x
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
35
50
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
-
0.5
1.0
1250
700
230
6.0
-
-
-
-
-
510
2.1
2.65
1.44
ITM=2000A
ITM=3900A
0.33
- VD=80% VDRM, Linear ramp, Gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
0.25
1000
1.0
2.0
Rated VDRM
Tj=25°C
VD=67% VDRM, ITM=1000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
-
920 ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=50V
-
50
70
0.022
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.044 Single side cooled
26
-
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R1279NC22x to R1279NC25x Issue 2
Page 2 of 12
August 2012




 R1279NC24J
Distributed Gate Thyristor Types R1279NC22x to R1279NC25x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
22
24
25
VDRM VDSM VRRM
V
2200
2400
2500
VRSM
V
2300
2500
2600
VD VR
DC V
1350
1450
1500
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type R1279NC22x to R1279NC25x Issue 2
Page 3 of 12
August 2012



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