Turn-Off Thyristor. S1200NC25M Datasheet

S1200NC25M Thyristor. Datasheet pdf. Equivalent


IXYS S1200NC25M
WESTCODE
An IXYS Company
Date:- 8 Apr, 2005
Data Sheet Issue:- 3
Symmetrical Gate Turn-Off Thyristor
Type S1200NC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Non-repetitive peak reverse voltage.
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1200
0.3
790
1600
13.0
23.0
840
1000
200
8
140
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type S1200NC25# Issue 3
Page 1 of 15
April, 2005


S1200NC25M Datasheet
Recommendation S1200NC25M Datasheet
Part S1200NC25M
Description Symmetrical Gate Turn-Off Thyristor
Feature S1200NC25M; WESTCODE An IXYS Company Date:- 8 Apr, 2005 Data Sheet Issue:- 3 Symmetrical Gate Turn-Off Thyrist.
Manufacture IXYS
Datasheet
Download S1200NC25M Datasheet




IXYS S1200NC25M
WESTCODE An IXYS Company
Characteristics
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
VTM
IL
IH
dv/dtcr
IDM
IRM
IGKM
Parameter
Maximum peak on-state voltage.
Latching current.
Holding current.
Critical rate of rise of off-state voltage.
Peak off state current.
Peak reverse current.
Peak negative gate leakage current.
VGT Gate trigger voltage.
IGT Gate trigger current.
td Delay time.
tgt Turn-on time.
tf Fall time.
tgq Turn-off time.
Igq Turn-off gate current.
Qgq Turn-off gate charge.
ttail Tail time.
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink.
F Mounting force.
Wt Weight.
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
15
-
TYP MAX TEST CONDITIONS
2.4
10
10
-
-
-
-
1.0
0.9
0.8
2
0.5
0.05
1.5
4.5
1
19
300
4000
50
-
-
2.7 IG=2A, IT=1200A.
- Tj=25°C.
- Tj=25°C.
- VD=80%VDRM, VGR=-2V.
50 Rated VDRM, VGR=-2V
100 Rated VRRM
200 VGR=-16V
- Tj=-40°C.
- Tj=25°C.
VD=25V, RL=25m
- Tj=125°C.
7 Tj=-40°C.
2 Tj=25°C.
VD=25V, RL=25m
0.3 Tj=125°C.
VD=50%VDRM, ITGQ=1200A, IGM=20A, diG/dt=10A/µs
-
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD).
8.0 Conditions as for td, (10%IGM to 10%VD).
VD=80%VDRM, ITGQ=1200A, CS=3µF,
-
diGQ/dt=20A/µs, VGR=-16V, (90%ITGQ to 10%IVD).
22 Conditions as for tf, (10%IGQ to 10%ITGQ).
- Conditions as for tf.
5000 Conditions as for tf.
75 Conditions as for tf, (10%ITGQ to ITGQ<1A).
- Conditions as for tf.
0.027 Double side cooled.
- 0.070 Cathode side cooled.
- 0.045 Anode side cooled.
- 25 (see note 2).
480 -
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type S1200NC25# Issue 3
Page 2 of 15
April, 2005



IXYS S1200NC25M
WESTCODE An IXYS Company
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition. While not
given in the ratings, VDC should ideally be limited to 60% VDRM in this product.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 100 Volts. If specified at the time of order, a VRRM up to
80%VDRM is available.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves of figures
15 & 16. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
Ls
Ds R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively
Vs should be limited to 700 Volts to avoid possible device failure.
Data Sheet. Type S1200NC25# Issue 3
Page 3 of 15
April, 2005







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)