Turn-Off Thyristor. G3000TF450 Datasheet

G3000TF450 Thyristor. Datasheet pdf. Equivalent


IXYS G3000TF450
Date:- 28th April 2013
Data Sheet Issue:- 2
Anode Shorted Gate Turn-Off Thyristor
Types G3000TF450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM 4500V diGQ/dt=40A/µs, ITGQ=3000A and CS=6µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) IT=3000A repetitive, IGM=30A, diGM/dt=20A/µs. For di/dt>500A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
3000
200
1381
2770
24
32
2.88×106
500
200
21
100
18
-40 to +125
-40 to +125
UNITS
A
nH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
°C
°C
Data Sheet. Type G3000TF450 Issue 2
Page 1 of 11
April 2013


G3000TF450 Datasheet
Recommendation G3000TF450 Datasheet
Part G3000TF450
Description Anode Shorted Gate Turn-Off Thyristor
Feature G3000TF450; Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 .
Manufacture IXYS
Datasheet
Download G3000TF450 Datasheet




IXYS G3000TF450
Characteristics
Anode Shorted Gate Turn-Off Thyristor type G3000TF450
VTM
IL
IH
dv/dtcr
IDRM
IRRM
IGKM
VGT
IGT
td
tgt
Eon
tf
ts
tgq
IGQM
QGQ
ttail
Eoff
RthJK
F
Wt
Parameter
Maximum peak on-state voltage
Latching current
Holding current.
Critical rate of rise of off-state
voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
Gate trigger voltage
Gate trigger current
Delay time
Turn-on time
Turn-on energy
Fall time
Storage time
Turn-off time
Peak turn-off gate current
Turn-off gate charge
Tail time
Turn-off energy
Thermal resistance junction to sink
Mounting force
Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
TYP
3.75
40
40
MAX TEST CONDITIONS
4.0 IG=8A, IT=3000A
- Tj=25°C
- Tj=25°C
- - VD=3000V, VGR=-2V
- 60 Rated VDRM, VGR=-2V
- 20 VRR=18V
- 20 VGR=-18V
1.0 - Tj=-40°C
0.8 1.0 Tj=25°C
VD=25V, RL=25m
0.6 - Tj=125°C
3 8 Tj=-40°C
1.5 3 Tj=25°C
VD=25V, RL=25m
500 1000 Tj=125°C
1.5 3
4
10
VD=2250V, ITGQ=3000A, diT/dt=300A/µs,
IGM=30A, diG/dt=20A/µs, CS=6µF, Rs=5
0.7 1.5
2-
20 25
22 30
850
-
VDM =3600V, ITGQ=3000A, diGQ/dt=40A/µs,
VGR=-16V, CS=6µF
10 -
20 -
7 10
12 - Double side cooled
26 - Cathode side cooled
22 - Anode side cooled
- 44 (see note 2)
1.5 -
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
mA
µs
µs
J
µs
µs
µs
A
mC
µs
J
K/kW
K/kW
K/kW
kN
kg
Data Sheet. Type G3000TF450 Issue 2
Page 2 of 11
April 2013



IXYS G3000TF450
Anode Shorted Gate Turn-Off Thyristor type G3000TF450
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. It should be noted that VDRM is the
repeatable peak voltage, which may be applied to the device and does not relate to a DC operating condition.
Diagram 1.
1.2 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under conditions given in note 2 of
ratings. A snubber circuit equivalent to that given in diagram 2 is assumed. If a more complex snubber, such as an Underland
circuit, is employed then the equivalent CS should be used and Ls<0.2µH must be ensured.
Ls
Ds R
Cs
Diagram 2.
1.3 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-sinewave. These are included as a
guide to compare the alternative types of GTO thyristors available; values cannot be applied to practical applications, as they do not
include switching losses.
1.4 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2.
1.5 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.2µH implies no dangerous Vs voltages (see diagrams 2 & 3) can be
applied, provided the other conditions given in note 1.2 are enforced. Alternatively Vs should be limited to 800 Volts to avoid possible
device failure.
1.6 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-off to exceed VRGM which
is the implied DC condition.
Data Sheet. Type G3000TF450 Issue 2
Page 3 of 11
April 2013





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)