STFI6N80K5

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I 2 PAKFP Figure 1. Internal schematic diagram D(2) Features Order code STF6N80K5 STFI6N80K5 VDS RDS(on)max ID 800 V 1.6 Ω 4.5 A PTOT 25 W Industry’s lowest RDS(on) Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications G(1) S(3) AM01476v1 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF6N80K5 STFI6N80K5 Table 1. Device summary Marking Package 6N80K5 TO-220FP I2PAKFP Packing Tube September 2016 This is information on a prod...