General Purpose Transistor
KTC3875GR-G (NPN)
RoHS Device
Features
- High hFE - Low noise
Circuit Diagram
1 Base
Colle...
General Purpose
Transistor
KTC3875GR-G (
NPN)
RoHS Device
Features
- High hFE - Low noise
Circuit Diagram
1 Base
Collector 3
2 Emitter
0.055(1.40) 0.047(1.20)
SOT-23
0.118(3.00) 0.110(2.80)
3
1 : BASE 2 : EMITTER 3 : COLLECTOR
12
0.079(2.00) 0.071(1.80)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO 5 V
Collector current
IC 150 mA
Collector power dissipation
PC
150 mW
Thermal resistance from junction to ambient
RθJA
833 °C/W
Junction temperature range
TJ
150 °C
Storage temperature range
Tstg
-55~+150
°C
0.045(1.15) 0.035(0.90)
0.006(0.15) 0.003(0.08)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max
0.020(0.50) 0.012(0.30)
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Collector-Base breakdown voltage
IC=100μA , IE=...
