KTC3876

Plastic-Encapsulate Transistors NPN Silicon KTC3876 COLLECTOR BASE EMITTER 3 1 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous THERMAL CHARACTERISTICS Characteristics Total Device Dissipation TA =25 C Junction and Storage, Temperature Symbol VCEO VCBO VEBO IC Symbol PD TJ, Tstg Value 30 35 5.0 500 Value 200 -55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1 mA dc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 35Vdc , IE=0) Emitter Cutoff Current (VEB= 5.0 Vdc , IC=0) Symbol Min Max Unit V(BR)CEO 30 - Vdc V(BR)CBO 35 - Vdc V(BR)EBO 5.0 - Vdc ICBO - 0.1 uAdc IEBO - 0.1 uAdc WEITRON http://www.weitron.com.tw 1/3 30-Jul-2012 KTC3876 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Coun...