NPN Silicon Epitaxial Planar Transistor
FEATURES
z High power gain.
Pb
Lead-free
APPLICATIONS
z High frequency applic...
NPN Silicon Epitaxial Planar
Transistor
FEATURES
z High power gain.
Pb
Lead-free
APPLICATIONS
z High frequency application. z HF,VHF band amplifier appilication.
Production specification
KTC3879
ORDERING INFORMATION
Type No.
Marking
KTC3879
RR/RO/RY
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
4
IC Collector Current
50
IE Emitter Current
-50
PC Collector Power Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mA mW ℃
C110 Rev.A
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Production specification
NPN Silicon Epitaxial Planar
Transistor
KTC3879
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
35
V
Collector-emitter breakdown voltage V(BR)CEO IC=100μA,IB=0
30
V...