KTD1304

Plastic-Encapsulate Transistors FEATURES High emitter-base voltage low on resistance Marking: MAX Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 25 20 12 300 0.2 150 -55to +150 Unit V V V mA W KTD1304 (NPN) 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=100μA, IE=0 25 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current VCEO VEBO ICBO IC=1mA, IB=0 IE=100μA, IC=0 VCB=25 V, IE=0 20 12 V V 0.1 μA Emitter cut-off current IEBO VEB=12V, IC=0 0.1 μA DC current gain hFE(FOR) hFE(REV) VCE=2V, IC=4 mA VCE= 2V, IC= 4mA 200 20 1000 Collector-emitter s...