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Gate Thyristor. R1275NS20L Datasheet

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Gate Thyristor. R1275NS20L Datasheet
















R1275NS20L Thyristor. Datasheet pdf. Equivalent













Part

R1275NS20L

Description

Distributed Gate Thyristor



Feature


Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275 NS14# to R1275NS21# (Old Type Number: R 395CH21) Absolute Maximum Ratings VDR M VDSM VRRM VRSM VOLTAGE RATINGS Repet itive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltag e, (note 1) Non-repetitive peak reverse voltage, (note 1).
Manufacture

IXYS

Datasheet
Download R1275NS20L Datasheet


IXYS R1275NS20L

R1275NS20L; MAXIMUM LIMITS 1400-2100 1400-2100 140 0-1800 1500-1900 UNITS V V V V IT(AV) M IT(AV)M IT(AV)M IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t (di/dt)cr VRGM PG(AV) PG M Tj op Tstg OTHER RATINGS Maximum ave rage on-state current, Tsink=55°C, (no te 2) Maximum average on-state current. Tsink=85°C, (note 2) Maximum average on-state current. Tsink=85°C, (note 3) Nominal RMS on-state.


IXYS R1275NS20L

current, Tsink=25°C, (note 2) D.C. on- state current, Tsink=25°C, (note 4) Pe ak non-repetitive surge tp=10ms, Vrm=0. 6VRRM, (note 5) Peak non-repetitive sur ge tp=10ms, Vrm≤10V, (note 5) I2t cap acity for fusing tp=10ms, Vrm=0.6VRRM, (note 5) I2t capacity .


IXYS R1275NS20L

.





Part

R1275NS20L

Description

Distributed Gate Thyristor



Feature


Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275 NS14# to R1275NS21# (Old Type Number: R 395CH21) Absolute Maximum Ratings VDR M VDSM VRRM VRSM VOLTAGE RATINGS Repet itive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltag e, (note 1) Non-repetitive peak reverse voltage, (note 1).
Manufacture

IXYS

Datasheet
Download R1275NS20L Datasheet




 R1275NS20L
Date:- 1 Apr, 2003
Data Sheet Issue:- 2
Distributed Gate Thyristor
Types R1275NS14# to R1275NS21#
(Old Type Number: R395CH21)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1400-2100
1400-2100
1400-1800
1500-1900
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1275
861
508
2541
2147
15.5
17
1.20×106
1.45×106
1000
1500
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R1275NS14# to R1275NS21# Issue 2
Page 1 of 12
April, 2003




 R1275NS20L
WESTCODE An IXYS Company
Characteristics
Distributed Gate Thyristor Types R1275NS14# to R1275NS21#
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
55
65
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 1.9 ITM=2000A
- 2.45 ITM=3825A
- 1.207
- 0.342
- - VD=80% VDRM, Linear ramp, Gate o/c
- 150 Rated VDRM
- 150 Rated VRRM
- 3.0
- 300 Tj=25°C
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.4 1.0 VD=67% VDRM, IT=2000A, di/dt=60A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
940 -
420 500 ITM=1000A, tp=1000µs, di/dt=60A/µs,
188 - Vr=50V
5.0 -
-
60
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
70
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.024 Double side cooled
- 0.048 Single side cooled
- 26
510 -
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R1275NS14# to R1275NS21# Issue 2
Page 2 of 12
April, 2003




 R1275NS20L
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1275NS14# to R1275NS21#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
14
16
18
20
21
VDRM VDSM
V
1400
1600
1800
2000
2100
VRRM
V
1400
1600
1800
1800
1800
VRSM
V
1500
1700
1900
1900
1900
VD
DC V
930
1040
1150
1250
1300
VR
DC V
930
1040
1150
1150
1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R1275NS14# to R1275NS21# Issue 2
Page 3 of 12
April, 2003




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