LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8050 TRANSISTOR˄ NPN˅
FEATURES
Power dissipation
...
LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate
Transistors
L8050
TRANSISTOR˄
NPN˅
FEATURES
Power dissipation
PCM : 1 W ˄Tamb=25ć˅
Collector current
ICM: 1.5 A Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
˄ ćELECTRICAL CHARACTERISTICS Tamb=25
unless
üTO 92
1.EMITTER
2.BASE
3. COLLECTOR
123
˅otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A ˈ IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1 mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 Aˈ IC=0
5
V
Collector cut-off current
ICBO VCB= 40 V , IE=0
0.1 A
Collector cut-off current
ICEO VCE= 20 V , IB=0
0.1 A
Emitter cut-off current
IEBO VEB= 5 V , IC=0
0.1 A
DC current gain
hFE˄1˅ hFE˄2˅
VCE= 1 V , IC= 100 mA VCE= 1 V , IC=800 mA
85 40
300
Collector-emitter saturation voltage
VCE(sat)
I...
