MMBT5550

SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical Data SOT-23 Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5550 MMBT5551 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous M1F G1 140 160 160 180 6.0 600 Thermal Characteristics Symbol Ptot RθJA Ptot RθJA TJ, TSTG Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C Thermal Resistance from Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, Derate above 25°C Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range MMBT5550 MMBT5551 225 1.8 556 300 2.4...