Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction. Complementary NPN types available
Marking:...
Plastic-Encapsulate
Transistors
FEATURES
Epitaxial planar die construction. Complementary
NPN types available
Marking:2GM
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-4
IC 500 PC 300
TJ 150
Tstg -55 to +150
Unit
V V V mA mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
arameter
Symbol
Test conditions
ollector-base breakdown voltage
VCBO IC=-100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1.0mA,IB=0
Emitter-base breakdown voltage collector cut-off current
VEBO ICBO
IE=-100μA,IC=0 IE = 0; VCB = -80V
collector cut-off current
ICEO IB= 0; VCB = -80V
DC current gain collector-emitter saturation voltage
hFE VCE(sat)
VCE = -1V;IC = -10mA VCE = -1V;IC = -100mA
IC = -100mA; IB = -10mA
base-emitter saturation voltage
VBE...
