IXFH30N60Q

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet IXFH 30N60Q IXFT 30N60Q VDSS ID25 RDS(on) = 600 V = 30 A = 0.23 Ω trr ≤ 250 ns Symbol VVDDGSRS VVGGSSM IIDDM25 IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TTCC = 25°C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Maximum Ratings 600 V 600 V ±20 V ±30 V 30 A 120 A 30 A 45 mJ 1.5 J 10 V/ns 500 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 1.13/10 Nm/lb.in. 6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TVeGSmp=e0raVtu, rIeD = 250µA Coefficient VDS = VGS, ID = 4 mA Tem...