MMBTA94

SEMICONDUCTOR TECHNICAL DATA MMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. Description 3 2 1 The MMBTA94 is designed for application that requires high voltage. SOT–23 Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA COLLECTOR 3 DEVICE MARKING 1 BASE MMBTA94 = 4Z Absolute Maximum Ratings 2 EMITTER Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... -400 V VCEO ...