NSVMMBT6429LT1G

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage VCEO 50 45 Vdc Collector −Base Voltage VCBO 60 55 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. −55 to +150 °C © Semiconductor Components Industries, LLC, 1994 October, 2017 − Rev. 8 1 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM XXX MG G 1 XXX = Specific Device Code MMBT6428LT1 − 1KM NSV/MM...