NSVMMBT6520L

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Base Current Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IB IC Value −350 −350 −5.0 −250 −500 Unit Vdc Vdc Vdc mA mAdc Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses ex...