PBSS4140T
30 V Low V CE(sat) NPN Transistor
FEATURES ˙ Low collector-emitter saturation voltage ˙ High current capabili...
PBSS4140T
30 V Low V CE(sat)
NPN Transistor
FEATURES ˙ Low collector-emitter saturation voltage ˙ High current capabilities ˙ Improved device reliability due to reduced heat generation.
APPLICATIONS ˙ General purpose switching and muting ˙ LCD backlighting ˙ Supply line switching circuits ˙ Battery driven equipment (mobile phones,
video cameras and hand-held devices).
Absolute Maximum Ratings (T a = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage Collector Current (DC) Peak Collector Current
VEBO IC ICM
5 1 2
V A A
Peak Base Current Total Power Dissipation
Tamb? 25OC 1) Tamb? 25 OC 2)
IBM 1
A
200 Ptot mW
450
Junction Temperature
Tj 150 OC
Storage Temperature Range
TS -65 to +150 OC
Thermal Resistance From Junction In free air 1)
417
to Ambient
2) Rth j-a
K/W
In free air
278
Operating Ambient Temperature
Tamb
-65 to +150
OC
1) Device mounted on a printed-circuit board; single...
