Document
SMD Type
NPN Transistors PBSS4350T (KBSS4350T)
Transistors
■ Features
● High collector current capability ● High collector current gain ● Improved efficiency due to reduced heat generation. ● Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
1
3 2
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Repetitive Peak Collector Current (Note.1)
Collector Current - Pulse
Base Current
(Note.2)
Collector Power Dissipation
(Note.3) (Note.4)
(Note.1 and 2)
(Note.2)
(Note.3) Thermal Resistance Junction to Ambient
(Note.4)
(Note.1 and 2)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Symbol VCBO VCEO VEBO IC.