JANSR2N7390U Datasheet: RADIATION HARDENED POWER MOSFET





JANSR2N7390U RADIATION HARDENED POWER MOSFET Datasheet

Part Number JANSR2N7390U
Description RADIATION HARDENED POWER MOSFET
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download JANSR2N7390U Datasheet PDF

Features: PD-91804F IRHE9230 JANSR2N7390U RADIATI ON HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF- 19500/630 RAD-Hard HEXFET TECHNOLOGY P roduct Summary Part Number Radiation Le vel IRHE9230 100 kRads(Si) IRHE93230 30 0 kRads(Si) RDS(on) 0.80 0.80 I D -4.0A -4.0A QPL Part Number JANSR2N7 390U JANSF2N7390U LCC-18 Description IR HiRel RAD-Hard HEXFET technology pro vides high performance power MOSFETs fo r space applications. This technology h as over a decade of proven performance and reliability in satellite applicatio ns. These devices have been characteriz ed for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the p ower losses in switching applications s uch as DC to DC converters and motor co ntrol. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching , ease of paralleling and temperature s tability of electrical parameters. Features  Single Event E.

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PD-91804F
IRHE9230
JANSR2N7390U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
200V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9230 100 kRads(Si)
IRHE93230 300 kRads(Si)
RDS(on)
0.80
0.80
ID
-4.0A
-4.0A
QPL Part Number
JANSR2N7390U
JANSF2N7390U
LCC-18
Description
IR HiRel RAD-Hard HEXFET technology provides high
performance power MOSFETs for space applications.
This technology has over a decade of proven performance
and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
IAR
EAR
dv/dt
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
-4.0
-2.4
-16
25
0.2
± 20
171
-4.0
2.5
-27
-55 to + 150
300 (for 5s)
0.49 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For Footnotes, refer to the page 2.
1
2017-06-15

                    
  






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