K3380

2SK3380 Silicon N Channel MOS FET High Speed Switching Features Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st.Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Ratings 30 ±20 300 1.2 300 300 150 –55 to +150 Unit V V mA A mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current Zero gate voltege drain current I GSS I DSS — — Gate to source cutoff voltage VGS(off) Stat...