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T0160NB45A Dataheets PDF



Part Number T0160NB45A
Manufacturers IXYS
Logo IXYS
Description Insulated Gate Bi-Polar Transistor
Datasheet T0160NB45A DatasheetT0160NB45A Datasheet (PDF)

Date:- 6 Nov, 2015 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak for.

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Date:- 6 Nov, 2015 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C T j initial. MAXIMUM LIMITS 160 320 160 320 690 760 1.4.


S0500YC25Y T0160NB45A T0258HF65G


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