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T0360NB25A

IXYS

Insulated Gate Bi-Polar Transistor

WESTCODE An IXYS Company Date:- 23 Aug, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor...


IXYS

T0360NB25A

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WESTCODE An IXYS Company Date:- 23 Aug, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial....




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