Date:- 16 Aug, 2016 Data Sheet Issue:- 1
Insulated Gate Bi-Polar Transistor Type T0500ND25E
Absolute Maximum Ratings
...
Date:- 16 Aug, 2016 Data Sheet Issue:- 1
Insulated Gate Bi-Polar
Transistor Type T0500ND25E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS 2500
1250
±20
UNITS
V V V
IC(DC) ICRM IECO PMAX Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 850nH.
MAXIMUM LIMITS 500 1000 500 2.58
-40 to +125 -40 to +125
UNITS
A A A kW °C °C
Data Sheet T0500ND25E Issue 1
Page 1 of 6
August, 2016
Characteristics
Insulated Gate Bi-polar
Transistor Type T0500ND25E
IGBT Characteristics PARAMETER
VCE(sat) Collector – emitter saturation volta...
